P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

RS Stock No.:: 710-3238
Mfr. Part No.:: SI2301CDS-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

340 In stock for same day dispatch

80 available from Europe for delivery within 1 working day(s)

Price Each (In a Pack of 20)

Kr. 2,978

(exc. VAT)

Kr. 3,722

(inc. VAT)

Units	Per unit	Per Pack*
20 - 180	Kr. 2,978	Kr. 59,56
200 - 480	Kr. 2,383	Kr. 47,66
500 - 980	Kr. 1,789	Kr. 35,78
1000 - 1980	Kr. 1,491	Kr. 29,82
2000 +	Kr. 1,343	Kr. 26,86

*price indicative

RS Stock No.:: 710-3238
Mfr. Part No.:: SI2301CDS-T1-GE3
Brand:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	112 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	860 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Length	3.04mm
Number of Elements per Chip	1
Transistor Material	Si
Width	1.4mm
Typical Gate Charge @ Vgs	3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	1.02mm

P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor