Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3

RS Stock No.:: 710-3250
Mfr. Part No.:: SI2309CDS-T1-GE3
Brand:: Vishay

Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3

Subtotal (1 pack of 10 units)*

Kr. 51,94

(exc. VAT)

Kr. 64,92

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

Plus 30 unit(s) shipping from 17 August 2026
Plus 13 380 unit(s) shipping from 21 August 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	Kr. 5,194	Kr. 51,94

*price indicative

RS Stock No.:: 710-3250
Mfr. Part No.:: SI2309CDS-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	-60V
	Series	Si2309CDS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	345mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.7nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	1.4mm
	Standards/Approvals	RoHS
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds -60V
	Series Si2309CDS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 345mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.7nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 1.4mm
	Standards/Approvals RoHS
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3

This p-channel MOSFET is a compact surface-mount transistor designed for switching and load-control tasks in small-footprint electronics. It operates as an enhancement-mode device suitable for low- to moderate-current applications where a P-channel topology is required. The package and materials support routine board-level assembly and use across a wide ambient temperature span.

Features and Benefits:

• Low on-resistance 345mΩ reduces conduction losses
• 60V drain rating enables higher-voltage switching
• Continuous drain current 1.2A supports modest load currents
• Gate charge 2.7nC allows faster switching transitions
• Power dissipation 1.7W manages thermal load under normal use

Applications

• Suitable for handheld device high-side switching
• Ideal for battery protection and reverse-current blocking
• Used with power-management circuits in consumer electronics
• Can be used for signal-level load switching in control boards

What temperature range can it tolerate during operation?

It is specified to function between -55°C and 150°C, covering common industrial and consumer thermal environments.

How many pins and what mounting style does it use?

It has three terminals and is supplied in a surface-mount SOT-23 package for automated assembly.

What gate voltage limits should be observed in a design?

The gate-source voltage must not exceed ±20V to avoid damage to the gate oxide.

Are there any restrictions on automotive use?

It is not classified as an automotive-grade device, so designs requiring automotive approval should consider alternative qualified components.