Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- RS Stock No.:
- 710-3250
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 10 units)*
Kr.43 24
(exc. VAT)
Kr.54 05
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 150 unit(s) ready to ship
- Plus 90 unit(s) ready to ship from another location
- Plus 13 770 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | Kr. 4,324 | Kr. 43,24 |
*price indicative
- RS Stock No.:
- 710-3250
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si2309CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si2309CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay P-Channel MOSFET 60 V, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay P-Channel MOSFET 60 V, 3-Pin SOT-23 TP0610K-T1-GE3
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-23 ZXMN6A07FTA
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin SOT-23 IRLML2060TRPBF
- Vishay P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay P-Channel MOSFET Transistor 12 V, 3-Pin SOT-23 SI2333CDS-T1-GE3
- Vishay P-Channel MOSFET 40 V, 3-Pin SOT-23 SI2319CDS-T1-GE3
- Vishay P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2365EDS-T1-GE3