Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

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Subtotal (1 pack of 5 units)*

Kr.43 82 

(exc. VAT)

Kr.54 775 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
5 - 45Kr. 8,764Kr. 43,82
50 - 245Kr. 8,236Kr. 41,18
250 - 495Kr. 7,436Kr. 37,18
500 - 1245Kr. 7,024Kr. 35,12
1250 +Kr. 6,566Kr. 32,83

*price indicative

Packaging Options:
RS Stock No.:
710-3311
Mfr. Part No.:
SI4128DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.9A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

3.8nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Height

1.5mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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