Vishay Si4435DDY Type P-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3
- RS Stock No.:
- 710-3339
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.58 02
(exc. VAT)
Kr.72 52
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 230 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 5,802 | Kr. 58,02 |
| 100 - 490 | Kr. 5,509 | Kr. 55,09 |
| 500 - 990 | Kr. 4,631 | Kr. 46,31 |
| 1000 - 2490 | Kr. 4,374 | Kr. 43,74 |
| 2500 + | Kr. 4,063 | Kr. 40,63 |
*price indicative
- RS Stock No.:
- 710-3339
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4435DDY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4435DDY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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