Infineon HEXFET N-Channel MOSFET, 1.6 A, 100 V Enhancement, 3-Pin SOT-23 IRLML0100TRPBF

RS Stock No.:: 725-9350
Distrelec Article No.:: 304-45-311
Mfr. Part No.:: IRLML0100TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 1.6 A, 100 V Enhancement, 3-Pin SOT-23 IRLML0100TRPBF

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Subtotal (1 pack of 10 units)*

Kr. 34,78

(exc. VAT)

Kr. 43,48

(inc. VAT)

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Units	Per unit	Per Pack*
10 - 90	Kr. 3,478	Kr. 34,78
100 - 240	Kr. 3,306	Kr. 33,06
250 - 490	Kr. 3,238	Kr. 32,38
500 - 990	Kr. 2,002	Kr. 20,02
1000 +	Kr. 1,773	Kr. 17,73

*price indicative

RS Stock No.:: 725-9350
Distrelec Article No.:: 304-45-311
Mfr. Part No.:: IRLML0100TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	1.6A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	235mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.5nC
	Maximum Gate Source Voltage Vgs	-16V, +16V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Height	1.02mm
	Standards/Approvals	No
	Width	1.4mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 1.6A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 235mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.5nC
	Maximum Gate Source Voltage Vgs -16V, +16V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Height 1.02mm
	Standards/Approvals No
	Width 1.4mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 100V Maximum Drain Source Voltage, 1.6A Maximum Continuous Drain Current - IRLML0100TRPBF

This MOSFET is a surface-mount N-channel enhancement transistor designed for switching and power-control tasks in compact electronic assemblies. It operates across a wide temperature span and is intended for low-to-moderate current applications where a balance of voltage capability and small footprint is required.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching capability
• 1.6A continuous drain current supports moderate load currents
• 235mΩ RDS(on) reduces conduction losses during operation
• 2.5nC typical gate charge ensures efficient switching performance
• 1.3W maximum power dissipation allows sustained thermal load handling
• 16V gate-source tolerance provides margin for gate drive voltages

Applications

• Suitable for DC-DC converter switching stages
• Ideal for battery management and power distribution
• Used with motor-control driver circuits in low-power systems
• Can be used for LED driver switching elements
• Suitable for general-purpose switching in compact devices

What environmental temperature range can it withstand during operation?

It is rated to operate from -55°C up to 150°C, covering demanding thermal conditions.

What mounting and package considerations should designers plan for?

It comes in a SOT-23 surface-mount package, allowing automated assembly and dense PCB placement.

How does its forward voltage affect switching in rectifier or synchronous applications?

The device exhibits a forward voltage of 1.3V which influences conduction drop when used as a switching transistor in low-voltage circuits.

What pin count and gate-drive implications must be considered?

With three pins, standard gate, drain and source connections apply and a gate drive below the 16V rating should be used to avoid overstress.