Renesas N-Channel MOSFET, 100 A, 60 V, 4-Pin IPAK 2SK3385-AZ
- RS Stock No.:
- 772-5416P
- Mfr. Part No.:
- 2SK3385-AZ
- Brand:
- Renesas Electronics
Bulk discount available
View bulk pricing optionsSubtotal 40 units (supplied in a bag)*
Kr. 272,76
(exc. VAT)
Kr. 340,96
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 40 - 190 | Kr. 6,819 |
| 200 - 490 | Kr. 6,68 |
| 500 - 990 | Kr. 6,53 |
| 1000 + | Kr. 6,411 |
*price indicative
- RS Stock No.:
- 772-5416P
- Mfr. Part No.:
- 2SK3385-AZ
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 36 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.5mm | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 7mm | |
| Height | 2.3mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 36 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Width 7mm | ||
Height 2.3mm | ||
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