onsemi NTD18N06L N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 NTD18N06LT4G
- RS Stock No.:
- 773-7875
- Mfr. Part No.:
- NTD18N06LT4G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
Kr. 64,98
(exc. VAT)
Kr. 81,23
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 20 unit(s) shipping from 28 September 2026
- Plus 2 500 unit(s) shipping from 27 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 12,996 | Kr. 64,98 |
| 50 - 95 | Kr. 11,212 | Kr. 56,06 |
| 100 - 495 | Kr. 9,702 | Kr. 48,51 |
| 500 - 995 | Kr. 8,512 | Kr. 42,56 |
| 1000 + | Kr. 7,78 | Kr. 38,90 |
*price indicative
- RS Stock No.:
- 773-7875
- Mfr. Part No.:
- NTD18N06LT4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | NTD18N06L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -15, +15V | |
| Maximum Power Dissipation Pd | 55W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series NTD18N06L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -15, +15V | ||
Maximum Power Dissipation Pd 55W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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