Vishay Si7454DDP Type N-Channel MOSFET, 21 A, 100 V Enhancement, 8-Pin SO-8 SI7454DDP-T1-GE3
- RS Stock No.:
- 787-9241
- Mfr. Part No.:
- SI7454DDP-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 159,93
(exc. VAT)
Kr. 199,91
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 5 830 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 15,993 | Kr. 159,93 |
| 100 - 240 | Kr. 15,192 | Kr. 151,92 |
| 250 - 490 | Kr. 12,778 | Kr. 127,78 |
| 500 - 990 | Kr. 10,388 | Kr. 103,88 |
| 1000 + | Kr. 8,786 | Kr. 87,86 |
*price indicative
- RS Stock No.:
- 787-9241
- Mfr. Part No.:
- SI7454DDP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | Si7454DDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 29.7W | |
| Typical Gate Charge Qg @ Vgs | 12.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series Si7454DDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 29.7W | ||
Typical Gate Charge Qg @ Vgs 12.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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