Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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Subtotal (1 tape of 10 units)*

Kr.67 61 

(exc. VAT)

Kr.84 51 

(inc. VAT)

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Per Tape*
10 - 90Kr. 6,761Kr. 67,61
100 - 490Kr. 6,406Kr. 64,06
500 - 990Kr. 5,743Kr. 57,43
1000 - 2490Kr. 4,187Kr. 41,87
2500 +Kr. 3,787Kr. 37,87

*price indicative

Packaging Options:
RS Stock No.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.4nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

31.2W

Forward Voltage Vf

0.76V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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