Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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Subtotal (1 tape of 10 units)*

Kr. 54,09

(exc. VAT)

Kr. 67,61

(inc. VAT)

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Units
Per unit
Per Tape*
10 - 90Kr. 5,409Kr. 54,09
100 - 490Kr. 5,122Kr. 51,22
500 - 990Kr. 4,592Kr. 45,92
1000 - 2490Kr. 3,348Kr. 33,48
2500 +Kr. 3,029Kr. 30,29

*price indicative

Packaging Options:
RS Stock No.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.76V

Typical Gate Charge Qg @ Vgs

19.4nC

Maximum Power Dissipation Pd

31.2W

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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