Vishay Si2343CDS Type P-Channel MOSFET, 5.9 A, 30 V Enhancement, 3-Pin SOT-23 SI2343CDS-T1-GE3
- RS Stock No.:
- 812-3120
- Mfr. Part No.:
- SI2343CDS-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr. 113,38
(exc. VAT)
Kr. 141,72
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- 60 left, ready to ship
- Final 43 040 unit(s) shipping from 20 May 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 5,669 | Kr. 113,38 |
| 200 - 480 | Kr. 4,256 | Kr. 85,12 |
| 500 - 980 | Kr. 3,512 | Kr. 70,24 |
| 1000 - 1980 | Kr. 3,009 | Kr. 60,18 |
| 2000 + | Kr. 2,946 | Kr. 58,92 |
*price indicative
- RS Stock No.:
- 812-3120
- Mfr. Part No.:
- SI2343CDS-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | Si2343CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.045Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series Si2343CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.045Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2343CDS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2374DS-T1-GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23