Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

Subtotal (1 pack of 10 units)*

Kr.53 68 

(exc. VAT)

Kr.67 10 

(inc. VAT)

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Being discontinued
  • Final 10 640 unit(s), ready to ship
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10 +Kr. 5,368Kr. 53,68

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Packaging Options:
RS Stock No.:
818-1390
Mfr. Part No.:
SI7288DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

15.6W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

5.99mm

Width

5 mm

Height

1.07mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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