Infineon OptiMOS P P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1

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Packaging Options:
RS Stock No.:
823-5554
Mfr. Part No.:
IPP80P03P4L04AKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Series

OptiMOS P

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

137 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

125 nC @ 10 V

Length

10mm

Number of Elements per Chip

1

Width

4.4mm

Height

15.65mm

Automotive Standard

AEC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

COO (Country of Origin):
MY

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

Infineon OptiMOS P Series MOSFET, 80A Maximum Continuous Drain Current, 137W Maximum Power Dissipation - IPP80P03P4L04AKSA1


This P-channel MOSFET is designed for high-performance applications in electronic circuits and plays a crucial role in power management and control, especially within the automotive sector. Built to withstand challenging environments, it operates efficiently across a wide temperature range and meets AEC qualification standards, making it appropriate for automotive use.

Features & Benefits


• P-channel configuration enhances design flexibility
• Continuous drain current capability of up to 80A
• Robust thermal performance with a maximum operating temperature of +175°C
• Low RDS(on) of 7mΩ enhances energy efficiency
• High power dissipation capacity of 137W enables effective thermal management
• Avalanche-tested for reliability under dynamic conditions

Applications


• Reverse battery protection in automotive systems
• High power driver circuits
• Automated control systems requiring dependable performance
• Power management solutions in electronic devices

What is the maximum operating temperature for this device?


The device can function at temperatures up to +175°C, making it suitable for arduous applications.

How can it be used in automotive systems?


Its automotive qualification ensures durability under harsh conditions, making it ideal for applications like reverse battery protection and power management.

What are the gate-source voltage limits?


The acceptable gate-source voltage ranges from -16V to +5V, providing flexibility in circuit designs.

What measures are in place for thermal management?


With a maximum power dissipation of 137W and strong thermal characteristics, it effectively manages heat in demanding applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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