Infineon OptiMOS 3 Type N-Channel MOSFET, 7 A, 200 V Enhancement, 8-Pin TDSON BSC22DN20NS3GATMA1

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Subtotal (1 pack of 20 units)*

Kr.135 74 

(exc. VAT)

Kr.169 68 

(inc. VAT)

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20 +Kr. 6,787Kr. 135,74

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Packaging Options:
RS Stock No.:
825-9146
Mfr. Part No.:
BSC22DN20NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

225mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.2nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

34W

Maximum Operating Temperature

150°C

Height

1.1mm

Standards/Approvals

No

Width

6.35 mm

Length

5.35mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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