Name: ROHM SiC N-Channel MOSFET Transistor, 22 A, 1200 V, 3-Pin TO-247 SCT2160KEC
Brand: ROHM
SKU: 826-6908
Price: 142.95 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	22 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	226 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Maximum Power Dissipation	165 W
	Transistor Configuration	Single
	Number of Elements per Chip	1
	Length	15.9mm
	Transistor Material	SiC
	Width	20.95mm
	Typical Gate Charge @ Vgs	62 nC @ 18 V
	Maximum Operating Temperature	+175 °C
	Height	5.03mm

	Select all
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 22 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 226 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Maximum Power Dissipation 165 W
	Transistor Configuration Single
	Number of Elements per Chip 1
	Length 15.9mm
	Transistor Material SiC
	Width 20.95mm
	Typical Gate Charge @ Vgs 62 nC @ 18 V
	Maximum Operating Temperature +175 °C
	Height 5.03mm

SCT2160KE, N-Channel SiC power MOSFET

N-Channel SiC MOSFET Transistors, ROHM

Silicon Carbide (SiC) MOSFETs feature lower switching losses and superior high temperature operating characteristics than their silicon counterparts and are ideally suited to high-efficiency high frequency switching applications.

MOSFET Transistors, ROHM Semiconductor

ROHM SiC N-Channel MOSFET Transistor, 22 A, 1200 V, 3-Pin TO-247 SCT2160KEC

N-Channel SiC MOSFET Transistors, ROHM

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