Name: ROHM SiC N-Channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247 SCT2450KEC
Brand: ROHM
SKU: 826-6911
Price: 81.75 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	10 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	610 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Maximum Power Dissipation	85 W
	Transistor Configuration	Single
	Maximum Operating Temperature	+175 °C
	Length	15.9mm
	Typical Gate Charge @ Vgs	27 nC @ 18 V
	Number of Elements per Chip	1
	Transistor Material	SiC
	Width	20.95mm
	Height	5.03mm

	Select all
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 10 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 610 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Maximum Power Dissipation 85 W
	Transistor Configuration Single
	Maximum Operating Temperature +175 °C
	Length 15.9mm
	Typical Gate Charge @ Vgs 27 nC @ 18 V
	Number of Elements per Chip 1
	Transistor Material SiC
	Width 20.95mm
	Height 5.03mm

SCT2450KE, N-Channel SiC power MOSFET

N-Channel SiC MOSFET Transistors, ROHM

Silicon Carbide (SiC) MOSFETs feature lower switching losses and superior high temperature operating characteristics than their silicon counterparts and are ideally suited to high-efficiency high frequency switching applications.

MOSFET Transistors, ROHM Semiconductor

ROHM SiC N-Channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247 SCT2450KEC

N-Channel SiC MOSFET Transistors, ROHM

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