Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

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Subtotal (1 pack of 50 units)*

Kr.314 60 

(exc. VAT)

Kr.393 25 

(inc. VAT)

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50 +Kr. 6,292Kr. 314,60

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Packaging Options:
RS Stock No.:
826-9260
Mfr. Part No.:
BSP296NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

OptiMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Forward Voltage Vf

0.85V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Operating Temperature

150°C

Height

1.6mm

Length

6.5mm

Standards/Approvals

No

Width

3.5 mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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