Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

Kr.2 507 00 

(exc. VAT)

Kr.3 134 00 

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 2,507Kr. 2 507,00

*price indicative

RS Stock No.:
166-1014
Mfr. Part No.:
BSP372NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

OptiMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.6mm

Length

6.5mm

Width

3.5 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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