Infineon OptiMOS™ N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S207ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.25mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

4.4mm