Infineon OptiMOS™ N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L06ATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

114 nC @ 10 V

Length

10mm

Number of Elements per Chip

1

Width

9.25mm

Minimum Operating Temperature

-55 °C

Height

4.4mm