Infineon OptiMOS T2 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP70N04S406AKSA1

RS Stock No.:: 857-6952
Mfr. Part No.:: IPP70N04S406AKSA1
Brand:: Infineon

Infineon OptiMOS T2 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP70N04S406AKSA1

Bulk discount available

Subtotal (1 tube of 500 units)*

Kr.4 527 00

(exc. VAT)

Kr.5 659 00

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Tube*
500 - 2000	Kr. 9,054	Kr. 4 527,00
2500 - 4500	Kr. 6,746	Kr. 3 373,00
5000 +	Kr. 6,578	Kr. 3 289,00

*price indicative

RS Stock No.:: 857-6952
Mfr. Part No.:: IPP70N04S406AKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	70 A
	Maximum Drain Source Voltage	40 V
	Package Type	TO-220
	Series	OptiMOS T2
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	58 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	24.5 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Length	10mm
	Transistor Material	Si
	Width	4.4mm
	Height	15.65mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 70 A
	Maximum Drain Source Voltage 40 V
	Package Type TO-220
	Series OptiMOS T2
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 58 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 24.5 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Length 10mm
	Transistor Material Si
	Width 4.4mm
	Height 15.65mm
	Minimum Operating Temperature -55 °C

RoHS Status: Exempted

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T2 N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 IPP70N04S406AKSA1

Infineon OptiMOS™ T2 Power MOSFETs

Related links