Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 6-Pin TO-263 IRFS7430TRL7PP
- RS Stock No.:
- 872-4202
- Mfr. Part No.:
- IRFS7430TRL7PP
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
Kr.129 592
(exc. VAT)
Kr.161 992
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 64 unit(s) shipping from 29. desember 2025
- Plus 8 unit(s) shipping from 29. desember 2025
- Plus 5 296 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 + | Kr. 32,398 | Kr. 129,59 |
*price indicative
- RS Stock No.:
- 872-4202
- Mfr. Part No.:
- IRFS7430TRL7PP
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 522A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 750μΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 522A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 750μΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS7430TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK AUIRFS8409-7TRL
- Infineon HEXFET N-Channel MOSFET Transistor 40 V, 3-Pin D2PAK IRF4104SPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRF1404ZSTRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRLS3034TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRLS3034TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRL40SC209
- Infineon HEXFET N-Channel MOSFET 40 V, 7-Pin D2PAK-7 IRFS3004TRL7PP