Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 919-0275
Mfr. Part No.:: SI2325DS-T1-E3
Brand:: Vishay

Vishay Si2325DS Type P-Channel MOSFET, -530 mA, -150 V Enhancement, 3-Pin SOT-23

Subtotal (1 reel of 3000 units)*

Kr. 14 130,00

(exc. VAT)

Kr. 17 670,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

Temporarily out of stock

Shipping from 15 September 2026

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Units	Per unit	Per Reel*
3000 +	Kr. 4,71	Kr. 14 130,00

*price indicative

RS Stock No.:: 919-0275
Mfr. Part No.:: SI2325DS-T1-E3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-530mA
	Maximum Drain Source Voltage Vds	-150V
	Series	Si2325DS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	750mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.04mm
	Height	1.02mm
	Width	1.4mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -530mA
	Maximum Drain Source Voltage Vds -150V
	Series Si2325DS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 750mW
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.04mm
	Height 1.02mm
	Width 1.4mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si2325DS Series MOSFET, -150V Maximum Drain Source Voltage, 1.2Ω Maximum Drain Source Resistance - SI2325DS-T1-E3

This p-channel MOSFET is a surface-mount semiconductor device designed for high-voltage switching and control in Compact assemblies. It functions as an enhancement-mode transistor suitable for use where reverse-polarity or high-side switching is required, and is optimised for low-power dissipation in small form-factor SOT-23 packages. The device operates across a wide temperature range, making it appropriate for varied industrial electronic contexts.

Features and Benefits:

• Maximum drain-source voltage supports 150V applications • Drain-source resistance of 1.2Ω reduces conduction losses • Continuous drain current of -530mA permits modest load driving • Typical gate charge of 7.7nC enables Faster gate transitions • Power dissipation rating of 750mW limits thermal build-up • Gate-source voltage tolerance of 20V allows robust drive margins

Applications

• Suitable for high-voltage load switching in automation systems • Ideal for high-side switching in control and power modules • Used for reverse-polarity protection in electronic designs • Can be used for level-shifted gate-drive circuits • Suitable for Compact power-management boards in instrumentation

What are the thermal limits for reliable operation?

The device is specified to operate between -55°C and 150°C, allowing use across typical industrial temperature ranges.

How does the package influence board layout?

The SOT-23 surface-mount package with three pins and Compact footprint supports dense assembly and straightforward thermal via placement for heat management.

What electrical constraint should designers observe for gate driving?

Designers must restrict gate-source voltage within ±20V to avoid gate dielectric stress and ensure long-term reliability.

How should power dissipation considerations affect cooling strategy?

With a 750mW dissipation rating, designers should provide adequate copper area or heatsinking on the PCB to maintain junction temperatures under load.