Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

Kr.9 682 50 

(exc. VAT)

Kr.12 102 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 3,873Kr. 9 682,50

*price indicative

RS Stock No.:
919-0281
Mfr. Part No.:
SI4214DDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

19.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

14.5nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Height

1.5mm

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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