Recently searched

    BGA5H1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 18.1 dB 2690 MHz, 6-Pin TSNP-6-10

    RS Stock No.:
    258-0655
    Mfr. Part No.:
    BGA5H1BN6E6327XTSA1
    Brand:
    Infineon
    Infineon
    View all RF Amplifiers ICs
    In stock for same day dispatch
    Add to Basket
    Units

    Added

    Price Each (On a Reel of 12000)

    kr 4,28

    (exc. VAT)

    kr 5,35

    (inc. VAT)

    UnitsPer unitPer Reel*
    12000 - 12000kr 4,28kr 51 360,00
    24000 - 24000kr 3,852kr 46 224,00
    36000 +kr 3,467kr 41 604,00
    *price indicative
    RS Stock No.:
    258-0655
    Mfr. Part No.:
    BGA5H1BN6E6327XTSA1
    Brand:
    Infineon

    Technical Reference


    Legislation and Compliance


    Product Details

    The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
    increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.

    Low current consumption of 8.5 mA
    Multi-state control: Bypass- and high gain-Mode
    Ultra small TSNP-6-10 leadless package
    RF output internally matched to 50 Ohm
    Low external component count


    Specifications

    AttributeValue
    Amplifier TypeLow Noise
    Typical Power Gain18.1 dB
    Typical Output Power60mW
    Typical Noise Figure1.2dB
    Maximum Operating Frequency2690 MHz
    Package TypeTSNP-6-10
    Pin Count6
    In stock for same day dispatch
    Add to Basket
    Units

    Added

    Price Each (On a Reel of 12000)

    kr 4,28

    (exc. VAT)

    kr 5,35

    (inc. VAT)

    UnitsPer unitPer Reel*
    12000 - 12000kr 4,28kr 51 360,00
    24000 - 24000kr 3,852kr 46 224,00
    36000 +kr 3,467kr 41 604,00
    *price indicative