BGA5H1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 18.1 dB 2690 MHz, 6-Pin TSNP-6-10
- RS Stock No.:
- 258-0655
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Brand:
- Infineon
View all RF Amplifiers ICs
In stock for same day dispatch
Price Each (On a Reel of 12000)
kr 3,203
(exc. VAT)
kr 4,004
(inc. VAT)
| Units | Per unit | Per Reel* |
| 12000 - 12000 | kr 3,203 | kr 38 436,00 |
| 24000 - 24000 | kr 2,883 | kr 34 596,00 |
| 36000 + | kr 2,595 | kr 31 140,00 |
| *price indicative | ||
- RS Stock No.:
- 258-0655
- Mfr. Part No.:
- BGA5H1BN6E6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
Specifications
| Attribute | Value |
| Amplifier Type | Low Noise |
| Typical Power Gain | 18.1 dB |
| Typical Output Power | 60mW |
| Typical Noise Figure | 1.2dB |
| Maximum Operating Frequency | 2690 MHz |
| Package Type | TSNP-6-10 |
| Pin Count | 6 |