BGA7L1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 13.6 dB, 6-Pin 960MHz TSNP-6-2

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Subtotal (1 reel of 15000 units)*

Kr. 40 770,00

(exc. VAT)

Kr. 50 970,00

(inc. VAT)

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Units
Per unit
Per Reel*
15000 +Kr. 2,718Kr. 40 770,00

*price indicative

RS Stock No.:
273-5225
Mfr. Part No.:
BGA7L1BN6E6327XTSA1
Brand:
Infineon
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Brand

Infineon

Amplifier Type

Low Noise

Product Type

RF Amplifier

Technology

Silicon Germanium

Gain

13.6dB

Mount Type

Surface

Package Type

TSNP-6-2

Minimum Supply Voltage

1.5V

Pin Count

6

Maximum Supply Voltage

3.6V

Third Order Intercept OIP3

5dBm

Minimum Operating Temperature

-40°C

Noise Figure

0.75dB

Maximum Operating Temperature

85°C

Standards/Approvals

JEDEC47/20/22

Height

0.37mm

Length

1.1mm

Series

BGA7L1BN6

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 716 MHz to 960 MHz. The LNA provides 13.6 dB gain and 0. 75 dB noise figure at a current consumption of 4.9 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single line two state control and OFF state can be enabled by powering down Vcc.

Pb free package

RoHS compliant

Low noise figure

Digitally on off switch

Low current consumption

Only 1 external SMD component necessary

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