STMicroelectronics 650 V 8 A Diode 2-Pin TO-220 STPSC8065D
- RS Stock No.:
- 164-6987
- Mfr. Part No.:
- STPSC8065D
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.103 42
(exc. VAT)
Kr.129 275
(inc. VAT)
FREE delivery for online orders over 500,00 kr
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- Shipping from 29. juni 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 20,684 | Kr. 103,42 |
| 25 - 45 | Kr. 20,088 | Kr. 100,44 |
| 50 - 120 | Kr. 19,586 | Kr. 97,93 |
| 125 - 245 | Kr. 19,082 | Kr. 95,41 |
| 250 + | Kr. 18,624 | Kr. 93,12 |
*price indicative
- RS Stock No.:
- 164-6987
- Mfr. Part No.:
- STPSC8065D
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Forward Voltage Vf | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.75mm | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Diameter | 3.75 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Forward Voltage Vf 1.65V | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 750μA | ||
Maximum Operating Temperature 175°C | ||
Height 15.75mm | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Diameter 3.75 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
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