MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18990 Products showing for MOSFETs

    DiodesZetex
    N
    600 mA
    60 V
    1.5 Ω
    TO-92
    -
    3V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    700 mW
    -
    Single
    4.77mm
    +150 °C
    1
    Si
    -
    2.41mm
    Infineon
    N
    20 A
    30 V
    4.8 mΩ
    SOIC
    HEXFET
    2.32V
    Surface Mount
    1.39V
    8
    -20 V, +20 V
    Enhancement
    2.5 W
    -
    Single
    5mm
    +155 °C
    1
    Si
    34 nC @ 4.5 V
    4mm
    Infineon
    N
    58 A
    650 V
    0.042 Ω
    TO-247
    CoolSiC
    5.7V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Infineon
    P
    190 mA
    250 V
    20 Ω
    SOT-89
    SIPMOS®
    2V
    Surface Mount
    1V
    3
    -20 V, +20 V
    Enhancement
    1 W
    -
    Single
    4.5mm
    +150 °C
    1
    Si
    4.9 nC @ 10 V
    2.5mm
    DiodesZetex
    N
    4 A
    30 V
    85 mΩ
    SOT-23
    -
    1.4V
    Surface Mount
    0.6V
    3
    -12 V, +12 V
    Enhancement
    1.4 W
    -
    Single
    3mm
    +150 °C
    1
    Si
    11.7 nC @ 10 V
    1.4mm
    onsemi
    N
    35 A
    55 V
    34 mΩ
    TO-220AB
    UltraFET
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    93 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    36 nC @ 20 V
    4.7mm
    Vishay
    P
    1.8 A
    400 V
    7 Ω
    IPAK (TO-251)
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    50 W
    -
    Single
    6.73mm
    +150 °C
    1
    Si
    13 nC @ 10 V
    2.38mm
    onsemi
    N
    500 mA
    60 V
    5 Ω
    TO-92
    -
    3V
    Through Hole
    0.8V
    3
    -20 V, +20 V
    Enhancement
    830 mW
    -
    Single
    5.2mm
    +150 °C
    1
    Si
    -
    4.19mm
    onsemi
    N
    220 mA
    50 V
    3.5 Ω
    SOT-23
    -
    1.5V
    Surface Mount
    0.8V
    3
    -20 V, +20 V
    Enhancement
    360 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    1.7 nC @ 10 V
    1.3mm
    onsemi
    P
    4.4 A
    100 V
    104 mΩ
    Power 33
    PowerTrench
    -
    Surface Mount
    2V
    8
    -25 V, +25 V
    Enhancement
    40 W
    -
    Single
    3.3mm
    +150 °C
    1
    Si
    16 nC @ 10 V
    3.3mm
    Toshiba
    N
    6 A
    650 V
    1.11 Ω
    SC-67
    TK
    4V
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    45 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    20 nC @ 10 V
    4.5mm
    Infineon
    N
    169 A
    55 V
    5 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    330 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    170 nC @ 10 V
    4.83mm
    Infineon
    N
    18 A
    600 V
    -
    TO-220 FP
    -
    -
    Through Hole
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    100 A
    100 V
    5.6 mΩ
    TDSON
    OptiMOS™ 5
    3.8V
    Surface Mount
    2.2V
    8
    20 V
    Enhancement
    139 W
    -
    Single
    5.49mm
    +150 °C
    1
    -
    58 nC @ 10 V
    6.35mm
    onsemi
    N
    15 A
    650 V
    440 mΩ
    TO-220F
    UniFET
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    38.5 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    48.5 nC @ 10 V
    4.7mm
    Toshiba
    N
    20 A
    600 V
    175 mΩ
    TO-220SIS
    TK
    3.7V
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    45 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    55 nC @ 10 V
    4.5mm
    STMicroelectronics
    N
    13 A
    600 V
    550 mΩ
    TO-220FP
    MDmesh, SuperMESH
    4.5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    35 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    66 nC @ 10 V
    4.6mm
    onsemi
    N
    55 A
    100 V
    26 mΩ
    D2PAK (TO-263)
    QFET
    -
    Surface Mount
    2V
    3
    -25 V, +25 V
    Enhancement
    3.75 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    75 nC @ 10 V
    9.65mm
    Microchip
    N
    120 mA
    400 V
    25 Ω
    TO-92
    -
    3.5V
    Through Hole
    -
    3
    -20 V, +20 V
    Depletion
    1 W
    -
    Single
    5.2mm
    +150 °C
    1
    Si
    -
    4.19mm
    onsemi
    N
    68 A
    60 V
    6.5 mΩ
    DFN
    -
    2V
    Surface Mount
    1.2V
    8
    ±20 V
    Enhancement
    57.5 W
    -
    -
    5.1mm
    +175 °C
    2
    -
    9.8 nC @ 4.5 V
    6.1mm
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