Infineon 4 kB SPI FRAM 8-Pin SOIC
- RS Stock No.:
- 188-5409
- Mfr. Part No.:
- FM25040B-G
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 97 units)*
Kr.1 544 628
(exc. VAT)
Kr.1 930 785
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 06. juli 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 97 - 97 | Kr. 15,924 | Kr. 1 544,63 |
| 194 - 194 | Kr. 15,446 | Kr. 1 498,26 |
| 291 + | Kr. 14,809 | Kr. 1 436,47 |
*price indicative
- RS Stock No.:
- 188-5409
- Mfr. Part No.:
- FM25040B-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Organisation | 512 x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 20ns | |
| Maximum Clock Frequency | 20MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 3.98 mm | |
| Standards/Approvals | No | |
| Height | 1.38mm | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 4.5V | |
| Number of Words | 512 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Organisation 512 x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 20ns | ||
Maximum Clock Frequency 20MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 3.98 mm | ||
Standards/Approvals No | ||
Height 1.38mm | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 4.5V | ||
Number of Words 512 | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 4kbit SPI FRAM Memory 8-Pin SOIC, FM25040B-G
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- Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- Infineon 512kbit SPI FRAM Memory 8-Pin SOIC, FM25V05-G
- Infineon 128kbit SPI FRAM Memory 8-Pin SOIC, FM25V01A-G
- Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G
- Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G