Infineon 256 kB Parallel FRAM 28-Pin SOIC

View all FRAM Memory
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Subtotal (1 tube of 27 units)*

Kr.3 076 434 

(exc. VAT)

Kr.3 845 556 

(inc. VAT)

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  • Plus 270 unit(s) shipping from 09. februar 2026
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Units
Per unit
Per Tube*
27 - 27Kr. 113,942Kr. 3 076,43
54 - 81Kr. 112,464Kr. 3 036,53
108 - 243Kr. 105,053Kr. 2 836,43
270 - 486Kr. 102,359Kr. 2 763,69
513 +Kr. 99,803Kr. 2 694,68

*price indicative

RS Stock No.:
188-5426
Mfr. Part No.:
FM28V020-SG
Brand:
Infineon
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Brand

Infineon

Memory Size

256kB

Product Type

FRAM

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mount Type

Surface

Package Type

SOIC

Pin Count

28

Height

1.38mm

Length

4.97mm

Width

3.98 mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Minimum Supply Voltage

2V

Maximum Supply Voltage

3.6V

Automotive Standard

AEC-Q100

Number of Words

32k

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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