Renesas Electronics RJH65T14DPQ-A0#T0 IGBT, 100 A 650 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 124-0908P
- Mfr. Part No.:
- RJH65T14DPQ-A0#T0
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal 20 units (supplied in a tube)*
Kr.770 90
(exc. VAT)
Kr.963 62
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 20 - 38 | Kr. 38,545 |
| 40 - 198 | Kr. 34,66 |
| 200 - 398 | Kr. 31,635 |
| 400 + | Kr. 28,47 |
*price indicative
- RS Stock No.:
- 124-0908P
- Mfr. Part No.:
- RJH65T14DPQ-A0#T0
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | TO-247A | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.94 x 5.02 x 21.13mm | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 1750pF | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 250 W | ||
Package Type TO-247A | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.94 x 5.02 x 21.13mm | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1750pF | ||
- COO (Country of Origin):
- CN
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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