Renesas Electronics RJH60F5DPQ-A0#T0 IGBT, 80 A 600 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 124-3702P
- Mfr. Part No.:
- RJH60F5DPQ-A0#T0
- Brand:
- Renesas Electronics
Bulk discount available
Subtotal 4 units (supplied in a tube)*
Kr. 144,96
(exc. VAT)
Kr. 181,20
(inc. VAT)
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Units | Per unit |
|---|---|
| 4 - 8 | Kr. 36,24 |
| 10 - 48 | Kr. 32,90 |
| 50 - 98 | Kr. 30,255 |
| 100 + | Kr. 27,865 |
*price indicative
- RS Stock No.:
- 124-3702P
- Mfr. Part No.:
- RJH60F5DPQ-A0#T0
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 260.4 W | |
| Package Type | TO-247A | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.94 x 5.02 x 21.13mm | |
| Maximum Operating Temperature | +150 °C | |
| Gate Capacitance | 2780pF | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 260.4 W | ||
Package Type TO-247A | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.94 x 5.02 x 21.13mm | ||
Maximum Operating Temperature +150 °C | ||
Gate Capacitance 2780pF | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.