Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A, Through Hole

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Subtotal (1 pack of 2 units)*

Kr.70 09 

(exc. VAT)

Kr.87 612 

(inc. VAT)

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Per Pack*
2 - 4Kr. 35,045Kr. 70,09
6 - 10Kr. 33,20Kr. 66,40
12 - 48Kr. 31,355Kr. 62,71
50 - 98Kr. 26,97Kr. 53,94
100 +Kr. 25,625Kr. 51,25

*price indicative

Packaging Options:
RS Stock No.:
124-3701
Mfr. Part No.:
RJH60F3DPQ-A0#T0
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

178.5 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Gate Capacitance

1260pF

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
JP

IGBT Discretes, Renesas Electronics



IGBT Discretes & Modules


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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