Renesas Electronics RJH60F3DPQ-A0#T0 IGBT, 40 A 600 V, 3-Pin TO-247A, Through Hole
- RS Stock No.:
- 124-3701
- Mfr. Part No.:
- RJH60F3DPQ-A0#T0
- Brand:
- Renesas Electronics
View all IGBTs
In stock for same day dispatch
Price Each (In a Pack of 2)
kr 35,045
(exc. VAT)
kr 43,806
(inc. VAT)
Units | Per unit | Per Pack* |
2 - 4 | kr 35,045 | kr 70,09 |
6 - 10 | kr 33,20 | kr 66,40 |
12 - 48 | kr 31,355 | kr 62,71 |
50 - 98 | kr 26,97 | kr 53,94 |
100 + | kr 25,625 | kr 51,25 |
*price indicative |
Packaging Options:
- RS Stock No.:
- 124-3701
- Mfr. Part No.:
- RJH60F3DPQ-A0#T0
- Brand:
- Renesas Electronics
- COO (Country of Origin):
- JP
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 178.5 W |
Package Type | TO-247A |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.94 x 5.02 x 21.13mm |
Gate Capacitance | 1260pF |
Maximum Operating Temperature | +150 °C |