STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.1 180 05 

(exc. VAT)

Kr.1 475 07 

(inc. VAT)

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Units
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Per Tube*
30 - 30Kr. 39,335Kr. 1 180,05
60 - 120Kr. 38,313Kr. 1 149,39
150 +Kr. 37,367Kr. 1 121,01

*price indicative

RS Stock No.:
168-7005
Mfr. Part No.:
STGW60V60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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