STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

Kr.1 367 31 

(exc. VAT)

Kr.1 709 13 

(inc. VAT)

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  • Plus 330 unit(s) shipping from 27. januar 2026
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Units
Per unit
Per Tube*
30 - 60Kr. 45,577Kr. 1 367,31
90 - 480Kr. 36,463Kr. 1 093,89
510 - 960Kr. 32,451Kr. 973,53
990 +Kr. 27,391Kr. 821,73

*price indicative

RS Stock No.:
168-8881
Mfr. Part No.:
STGW30NC60KD
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 24.45mm

Energy Rating

1435mJ

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Gate Capacitance

2170pF

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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