STMicroelectronics, Type N-Channel IGBT, 86 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 tube of 30 units)*

Kr. 597,18

(exc. VAT)

Kr. 746,46

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 570 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 90Kr. 19,906Kr. 597,18
120 - 240Kr. 16,523Kr. 495,69
270 - 480Kr. 16,085Kr. 482,55
510 - 990Kr. 15,665Kr. 469,95
1020 +Kr. 15,288Kr. 458,64

*price indicative

RS Stock No.:
204-3943
Mfr. Part No.:
STGWA50HP65FB2
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

86A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

272W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

5.1mm

Series

STG

Standards/Approvals

RoHS

Length

15.9mm

Width

21.1 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C

Co-packaged protection diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive temperature coefficient

Related links