Infineon, Type N-Channel IGBT Single Transistor IC, 34 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6658
- Mfr. Part No.:
- IKFW40N60DH3EXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 30 units)*
Kr. 866,52
(exc. VAT)
Kr. 1 083,15
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 620 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | Kr. 28,884 | Kr. 866,52 |
*price indicative
- RS Stock No.:
- 215-6658
- Mfr. Part No.:
- IKFW40N60DH3EXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 34A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 111W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 34A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 111W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon high speed switching series insulated-gate bipolar transistor fast and soft antiparallel diode in fully isolated package.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference