Infineon IKW30N65H5XKSA1, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

Kr. 196,31

(exc. VAT)

Kr. 245,39

(inc. VAT)

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Units
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Per Pack*
5 - 5Kr. 39,262Kr. 196,31
10 - 20Kr. 35,372Kr. 176,86
25 - 45Kr. 32,97Kr. 164,85
50 - 120Kr. 30,614Kr. 153,07
125 +Kr. 28,28Kr. 141,40

*price indicative

Packaging Options:
RS Stock No.:
215-6673
Distrelec Article No.:
304-31-965
Mfr. Part No.:
IKW30N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

55A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Length

42mm

Standards/Approvals

JEDEC

Width

16.13 mm

Height

5.21mm

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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