Infineon, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr. 654,84
(exc. VAT)
Kr. 818,55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 180 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 21,828 | Kr. 654,84 |
| 60 - 120 | Kr. 20,737 | Kr. 622,11 |
| 150 - 270 | Kr. 19,864 | Kr. 595,92 |
| 300 - 570 | Kr. 18,99 | Kr. 569,70 |
| 600 + | Kr. 17,682 | Kr. 530,46 |
*price indicative
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC | |
| Series | LowVCE(sat) Fifth Generation | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, RoHS, JEDEC | ||
Series LowVCE(sat) Fifth Generation | ||
Automotive Standard No | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon IGW30N65L5XKSA1 IGBT 3-Pin PG-TO247-3
- Infineon IKW30N65EL5XKSA1 Single IGBT 3-Pin PG-TO247
- Infineon IKZ50N65EH5XKSA1 IGBT 4-Pin PG-TO247-4
- Infineon IHW40N65R6XKSA1 IGBT 650 V, 3-Pin PG-TO247-3
- Infineon IHW50N65R5XKSA1 IGBT 3-Pin PG-TO247-3
- Infineon AIGW50N65F5XKSA1 IGBT 3-Pin PG-TO247-3
- Infineon IKW75N65EH5XKSA1 IGBT 3-Pin PG-TO247-3
- Infineon IHW50N65R6XKSA1 IGBT 3-Pin PG-TO247-3
