Infineon IGW30N65L5XKSA1 IGBT, 85 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.882 33
(exc. VAT)
Kr.1 102 92
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 180 unit(s) shipping from 01. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 29,411 | Kr. 882,33 |
| 60 - 120 | Kr. 27,94 | Kr. 838,20 |
| 150 - 270 | Kr. 26,762 | Kr. 802,86 |
| 300 - 570 | Kr. 25,587 | Kr. 767,61 |
| 600 + | Kr. 23,822 | Kr. 714,66 |
*price indicative
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 85 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 227 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 85 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 227 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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