Infineon IKZ50N65EH5XKSA1, Type N-Channel IGBT, 85 A 650 V, 4-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr. 119,66

(exc. VAT)

Kr. 149,58

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 59,83Kr. 119,66
10 - 18Kr. 53,88Kr. 107,76
20 - 48Kr. 50,85Kr. 101,70
50 - 98Kr. 47,305Kr. 94,61
100 +Kr. 43,70Kr. 87,40

*price indicative

Packaging Options:
RS Stock No.:
215-6677
Mfr. Part No.:
IKZ50N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

85A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

273W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor and diode copacked with rapid 1 fast and soft antiparallel diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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