Infineon, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr. 1 017,24

(exc. VAT)

Kr. 1 271,55

(inc. VAT)

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  • 30 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 30Kr. 33,908Kr. 1 017,24
60 - 120Kr. 32,215Kr. 966,45
150 +Kr. 30,857Kr. 925,71

*price indicative

RS Stock No.:
215-6674
Mfr. Part No.:
IKW75N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

90A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Series

High Speed Fifth Generation

Length

41.42mm

Width

16.13 mm

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with high speed H5 technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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