Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6675
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.145 40
(exc. VAT)
Kr.181 76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 84 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 72,70 | Kr. 145,40 |
| 10 - 18 | Kr. 66,18 | Kr. 132,36 |
| 20 - 48 | Kr. 61,775 | Kr. 123,55 |
| 50 - 98 | Kr. 57,485 | Kr. 114,97 |
| 100 + | Kr. 53,08 | Kr. 106,16 |
*price indicative
- RS Stock No.:
- 215-6675
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 395 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 395 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with high speed H5 technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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