Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

Kr. 125,50

(exc. VAT)

Kr. 156,88

(inc. VAT)

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  • 52 unit(s) ready to ship
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Units
Per unit
Per Pack*
2 - 8Kr. 62,75Kr. 125,50
10 - 18Kr. 57,03Kr. 114,06
20 - 48Kr. 53,255Kr. 106,51
50 - 98Kr. 49,535Kr. 99,07
100 +Kr. 45,76Kr. 91,52

*price indicative

Packaging Options:
RS Stock No.:
215-6675
Mfr. Part No.:
IKW75N65EH5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

90A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

High Speed Fifth Generation

Width

16.13 mm

Length

41.42mm

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with high speed H5 technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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