Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.175 03 

(exc. VAT)

Kr.218 79 

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Pack*
5 - 20Kr. 35,006Kr. 175,03
25 - 45Kr. 31,482Kr. 157,41
50 - 120Kr. 29,40Kr. 147,00
125 - 245Kr. 27,318Kr. 136,59
250 +Kr. 25,556Kr. 127,78

*price indicative

Packaging Options:
RS Stock No.:
226-6063
Mfr. Part No.:
IGB50N65S5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

270 W

Configuration

Single

Package Type

PG-TO263

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current

Related links