Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

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Subtotal (1 pack of 5 units)*

Kr.184 52 

(exc. VAT)

Kr.230 65 

(inc. VAT)

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Temporarily out of stock
  • 1 000 unit(s) shipping from 15. januar 2026
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Units
Per unit
Per Pack*
5 - 20Kr. 36,904Kr. 184,52
25 - 45Kr. 33,198Kr. 165,99
50 - 120Kr. 30,98Kr. 154,90
125 - 245Kr. 28,784Kr. 143,92
250 +Kr. 26,952Kr. 134,76

*price indicative

Packaging Options:
RS Stock No.:
226-6063
Mfr. Part No.:
IGB50N65S5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

270 W

Number of Transistors

1

Package Type

PG-TO263

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.35 V at 25°C
Maximum junction temperature Tvj 175°C
four times nominal current

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