Infineon IGB50N65S5ATMA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-263, Surface

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Subtotal (1 pack of 5 units)*

Kr. 175,03

(exc. VAT)

Kr. 218,79

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 35,006Kr. 175,03
25 - 45Kr. 31,482Kr. 157,41
50 - 120Kr. 29,40Kr. 147,00
125 - 245Kr. 27,318Kr. 136,59
250 +Kr. 25,556Kr. 127,78

*price indicative

Packaging Options:
RS Stock No.:
226-6063
Mfr. Part No.:
IGB50N65S5ATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

270W

Package Type

PG-TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Gate Emitter Voltage VGEO

30 V

Maximum Operating Temperature

175°C

Series

TrenchStop

Standards/Approvals

No

Automotive Standard

No

The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.35 V at 25°C

Maximum junction temperature Tvj 175°C

four times nominal current

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