Infineon IKP28N65ES5XKSA1 IGBT Single Transistor IC, 28 A 650 V TO-220

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Subtotal (1 pack of 2 units)*

Kr. 64,75

(exc. VAT)

Kr. 80,938

(inc. VAT)

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  • 466 unit(s) ready to ship
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Units
Per unit
Per Pack*
2 - 18Kr. 32,375Kr. 64,75
20 - 48Kr. 29,17Kr. 58,34
50 - 98Kr. 27,17Kr. 54,34
100 - 198Kr. 25,28Kr. 50,56
200 +Kr. 23,34Kr. 46,68

*price indicative

Packaging Options:
RS Stock No.:
242-0980
Mfr. Part No.:
IKP28N65ES5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT Single Transistor IC

Maximum Continuous Collector Current Ic

28A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

130W

Package Type

TO-220

Maximum Gate Emitter Voltage VGEO

±20 ±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC47/20/22

Series

5th Generation

Automotive Standard

No

The Infineon 650 V, 28 A IGBT with anti-parallel diode in TO-220 package.It has a high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

High speed smooth switching device for hard & soft switching

175°C maximum junction temperature

No need for gate clamping components

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