Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS Stock No.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
Kr.23 755 00
(exc. VAT)
Kr.29 694 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 26. mai 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | Kr. 23,755 | Kr. 23 755,00 |
*price indicative
- RS Stock No.:
- 258-3756
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Package Type | PG-TO263-7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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