Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- RS Stock No.:
- 258-3757
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.54 91
(exc. VAT)
Kr.68 64
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 654 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 54,91 |
| 10 - 24 | Kr. 48,73 |
| 25 - 49 | Kr. 46,10 |
| 50 - 99 | Kr. 42,90 |
| 100 + | Kr. 39,58 |
*price indicative
- RS Stock No.:
- 258-3757
- Mfr. Part No.:
- IMBG120R350M1HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
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| Brand | Infineon | |
| Package Type | PG-TO263-7 | |
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|---|---|---|
Brand Infineon | ||
Package Type PG-TO263-7 | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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