Infineon IKQ75N120CH3XKSA1 IGBT, 150 A PG-TO247-3-46
- RS Stock No.:
- 260-5098
- Mfr. Part No.:
- IKQ75N120CH3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
Kr.3 272 37
(exc. VAT)
Kr.4 090 47
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 90 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 109,079 | Kr. 3 272,37 |
| 60 - 60 | Kr. 103,625 | Kr. 3 108,75 |
| 90 + | Kr. 97,081 | Kr. 2 912,43 |
*price indicative
- RS Stock No.:
- 260-5098
- Mfr. Part No.:
- IKQ75N120CH3XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 938 W | |
| Package Type | PG-TO247-3-46 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 938 W | ||
Package Type PG-TO247-3-46 | ||
The Infineon hard switching high speed IGBT3 in a TO247 package copacked with a soft and fast recovery full current anti-parallel emitter controlled diode.
High efficiency in hard switching and resonant topologies
Easy paralleling capability due to positive temperature
Low gate charge QG
Easy paralleling capability due to positive temperature
Low gate charge QG
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