STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 pack of 5 units)*

Kr.122 87 

(exc. VAT)

Kr.153 59 

(inc. VAT)

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5 - 20Kr. 24,574Kr. 122,87
25 - 45Kr. 23,338Kr. 116,69
50 - 120Kr. 21,026Kr. 105,13
125 - 245Kr. 18,922Kr. 94,61
250 +Kr. 17,984Kr. 89,92

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Packaging Options:
RS Stock No.:
795-9094
Mfr. Part No.:
STGF3NC120HD
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

25 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 16.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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