IXYS IXYH40N120C3, Type N-Channel high Speed IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 808-0275
- Distrelec Article No.:
- 302-53-446
- Mfr. Part No.:
- IXYH40N120C3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
Kr.137 75
(exc. VAT)
Kr.172 19
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 90 unit(s) shipping from 16. februar 2026
- Plus 86 unit(s) shipping from 23. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 137,75 |
| 5 - 9 | Kr. 126,76 |
| 10 - 29 | Kr. 120,12 |
| 30 - 89 | Kr. 109,14 |
| 90 + | Kr. 100,21 |
*price indicative
- RS Stock No.:
- 808-0275
- Distrelec Article No.:
- 302-53-446
- Mfr. Part No.:
- IXYH40N120C3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | high Speed IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 577W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.32mm | |
| Width | 16.26 mm | |
| Standards/Approvals | International Standard Package | |
| Series | GenX3TM | |
| Automotive Standard | No | |
| Energy Rating | 400mJ | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type high Speed IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 577W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.32mm | ||
Width 16.26 mm | ||
Standards/Approvals International Standard Package | ||
Series GenX3TM | ||
Automotive Standard No | ||
Energy Rating 400mJ | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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