IXYS, Type N-Channel high Speed IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

Subtotal (1 tube of 30 units)*

Kr.2 585 79 

(exc. VAT)

Kr.3 232 23 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 86,193Kr. 2 585,79

*price indicative

RS Stock No.:
168-4780
Mfr. Part No.:
IXYH40N120C3
Brand:
IXYS
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Brand

IXYS

Product Type

high Speed IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

577W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

50kHz

Maximum Collector Emitter Saturation Voltage VceSAT

4V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

International Standard Package

Series

GenX3TM

Width

16.26 mm

Length

20.32mm

Energy Rating

400mJ

Automotive Standard

No

COO (Country of Origin):
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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