Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3P, Through Hole

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Subtotal 10 units (supplied in a tube)*

Kr.265 10 

(exc. VAT)

Kr.331 40 

(inc. VAT)

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Units
Per unit
10 - 49Kr. 26,51
50 - 99Kr. 24,32
100 - 199Kr. 22,72
200 +Kr. 21,73

*price indicative

Packaging Options:
RS Stock No.:
891-2734P
Mfr. Part No.:
GT30J341,Q(O
Brand:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

59 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

0.4µs

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Energy Rating

0.8mJ

Gate Capacitance

2900pF

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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